213 Results for : d²pak

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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.40 EUR excl. shipping
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    HEXFET Power MOSFETApplicationsBrushed Motor drive applicationsBLDC Motor drive applicationsBattery powered circuitsHalf-bridge and full-bridge topologiesSynchronous rectifier applicationsResonant mode power suppliesOR-ing and redundant power switchesDC/DC and AC/DC convertersDC/AC InvertersBenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt CapabilityLead-FreeRoHS Compliant containing no Lead, no Bromide, and no Halogen
    • Shop: reichelt elektronik
    • Price: 1.30 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-Free
    • Shop: reichelt elektronik
    • Price: 2.85 EUR excl. shipping
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    HEXFET® Power MOSFETBenefitsAdvanced Process TechnologySurface Mount 175°C Operating TemperatureFast SwitchingP-ChannelFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surfacemount application.
    • Shop: reichelt elektronik
    • Price: 1.35 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.40 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche RatedEase of ParallelingSimple Drive RequirementsLead-Free
    • Shop: reichelt elektronik
    • Price: 1.75 EUR excl. shipping
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    HEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologySurface Mount175°C Operating TemperatureFast SwitchingFully Avalanche RatedLead-free
    • Shop: reichelt elektronik
    • Price: 3.99 EUR excl. shipping
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    FeaturesConstant 500kHz Switching FrequencyHigh Power 16-Pin TSSOP Package AvailableUses All Surface Mount ComponentsInductor Size Reduced to 1.8µHSaturating Switch Design: 0.07OEffective Supply Current: 2.5mAShutdown Current: 20µACycle-by-Cycle Current LimitingEasily SynchronizableApplicationsPortable ComputersBattery-Powered SystemsBattery ChargersDistributed Power
    • Shop: reichelt elektronik
    • Price: 12.85 EUR excl. shipping
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    N-Kanal 600 V, 0,135 O typ., 20 A MDmesh™ II Leistungs-MOSFETs in D²PAK- und TO-220-GehäusenBeschreibungBei diesen Bauelementen handelt es sich um N-Kanal-Leistungs-MOSFETs, die unter Verwendung der zweiten Generation der MDmesh™ Technologie entwickelt wurden. Dieser revolutionäre Power-MOSFET verbindet eine vertikale Struktur mit dem Streifenlayout des Unternehmens, um einen der weltweit niedrigsten Widerstände und Gate-Ladungen zu erzielen. Er eignet sich daher für die anspruchsvollsten Wandler mit hohem Wirkungsgrad.Merkmale• 100% Avalanche geprüft• Niedrige Eingangskapazität und Gate-Ladung• Niedriger Gate-EingangswiderstandApplikationen• Schaltapplikationen
    • Shop: reichelt elektronik
    • Price: 3.65 EUR excl. shipping
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    Kupferkühlkörper mit hervorragender Wärmeleitfähigkeit. Direkte Leiterplattenmontage durch lötbare Oberfläche.
    • Shop: digitalo
    • Price: 0.99 EUR excl. shipping


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