62 Results for : rdson

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    IPP65R600E6 - MOSFET N-Ch 650V 7,3A 63W 0,6R TO220
    650V CoolMOS™ E6 Power MOSFETFeatures• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• JEDEC1) qualified, Pb-free plating, Halogen freeApplicationsPFC stages,...
    • Shop: reichelt elektronik
    • Price: 0.78 EUR excl. shipping
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    IPW60R190E6 - MOSFET N-Ch 600V 20,2A 151W 0,19R TO247
    600V CoolMOS™ E6 Power MOSFETFeatures• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• JEDEC1) qualified, Pb-free plating, Halogen freeApplicationsPFC stages,...
    • Shop: reichelt elektronik
    • Price: 3.00 EUR excl. shipping
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    IPW65R190E6 - MOSFET N-Ch 650V 20,2A 151W 0,19R TO247
    650V CoolMOS™ E6 Power MOSFETFeatures• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• JEDEC1) qualified, Pb-free plating, Halogen freeApplicationsPFC stages,...
    • Shop: reichelt elektronik
    • Price: 2.10 EUR excl. shipping
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    IPP60R750E6 - MOSFET N-Ch 600V 5,7A 48W 0,75R TO220
    600V CoolMOS™ E6 Power MOSFETFeatures• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• JEDEC1) qualified, Pb-free plating, Halogen freeApplicationsPFC stages,...
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    IRLHS6276 - Dual-MOSFET, N-Kanal, 20 V, 4,5 A, 0,045 Ohm, QFN-6
    Die StrongIRFET™-Leistungs-MOSFET-Familie ist für niedrigen RDS(on) und hohe Strombelastbarkeit optimiert. Die Bauelemente sind ideal für Niederfrequenzanwendungen, die Leistung und Robustheit erfordern. Das umfassende Portfolio eignet sich für eine breite Palette...
    • Shop: reichelt elektronik
    • Price: 1.20 EUR excl. shipping
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    IPA60R600P6 - MOSFET N-Ch 600V 7,3A 28W 0,6R TO220-Fullpak
    600V CoolMOS™ P6 Power MOSFETFeatures• Increased MOSFET dv/dt ruggedness• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen...
    • Shop: reichelt elektronik
    • Price: 1.15 EUR excl. shipping
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    IPP60R190P6 - MOSFET N-Ch 600V 20,2A 151W 0,19R TO220
    600V CoolMOS™ P6 Power MOSFETFeatures• Increased MOSFET dv/dt ruggedness• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen...
    • Shop: reichelt elektronik
    • Price: 2.02 EUR excl. shipping
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    IPW60R190P6 - MOSFET N-Ch 600V 20,2A 151W 0,19R TO247
    600V CoolMOS™ P6 Power MOSFETFeatures• Increased MOSFET dv/dt ruggedness• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen...
    • Shop: reichelt elektronik
    • Price: 3.10 EUR excl. shipping
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    UF3C065040B3 - SiC-Kaskode-FET, 650V, 54A, Rdson 0,042R , D2PAK-3L
    650V SiC-MOSFET-Casecode 42mΩ D2PAK-3LBeschreibung:Die Kaskodenprodukte von United Silicon Carbide verpacken ihre Hochleistungs-G3-SiC-JFETs gemeinsam mit einem kaskodenoptimierten MOSFET, um das einzige Standard-Gate-Drive-SiC-Bauelement auf dem heutigen Markt herzustellen. Diese Serie weist eine...
    • Shop: reichelt elektronik
    • Price: 20.11 EUR excl. shipping
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    UJ3C065030B3S - SiC-Kaskode-FET, 650V, 66A, Rdson 0,027R, D2PAK-3L
    650V SiC-MOSFET-Kaskode 27mUJ3C065030B3S D2PAK-3LBeschreibung:Die Kaskodenprodukte von United Silicon Carbide verpacken ihre Hochleistungs-G3-SiC-JFETs zusammen mit einem kaskodenoptimierten MOSFET, um das einzige Standard-SiC-Gate-Drive-Bauelement auf dem heutigen Markt herzustellen. Diese Serie weist eine...
    • Shop: reichelt elektronik
    • Price: 24.28 EUR excl. shipping

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