43 Results for : to252aa

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    HEXFET Power MOSFETApplicationsBrushed Motor drive applicationsBLDC Motor drive applicationsPWM Inverterized topologiesBattery powered circuitsHalf-bridge and full-bridge topologiesSynchronous rectifier applicationsResonant mode power suppliesOR-ing and redundant power switchesDC/DC and AC/DC convertersBenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dv/dt and dI/dt CapabilityLead-Free
    • Shop: reichelt elektronik
    • Price: 1.07 EUR excl. shipping
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    HEXFET Power MOSFETLogic-Level Gate DriveUltra Low On-ResistanceAdvanced Process TechnologySurface Mount175°C Operating TemperatureFast SwitchingFully Avalanche RatedLead-free
    • Shop: reichelt elektronik
    • Price: 0.80 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxDescriptionSpecifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
    • Shop: reichelt elektronik
    • Price: 2.45 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLogic LevelDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.15 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic Level Gate DriveUltra Low On-ResistanceSurface Mount (IRLR3410)Advanced Process TechnologyFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.15 EUR excl. shipping
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    HEXFET Power MOSFETApplicationsHigh Frequency Synchronous Buck Converters for Computer Processor PowerHigh Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsVery Low RDS(on) at 4.5V VGSUltra-Low Gate ImpedanceFully Characterized Avalanche Voltage and CurrentLead-FreeRoHS compliant
    • Shop: reichelt elektronik
    • Price: 0.59 EUR excl. shipping
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    HEXFET Power MOSFETFeaturesIndustry-standard pinout D-PakCompatible with Existing Surface Mount TechniquesRoHS Compliant, Halogen-FreeMSL1, Industrial qualificationBenefitsMulti-Vendor CompatibilityEasier ManufacturingEnvironmentally FriendlierIncreased Reliability
    • Shop: reichelt elektronik
    • Price: 0.71 EUR excl. shipping
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    HEXFET Power MOSFETApplicationsHigh Frequency Synchronous BuckConverters for Computer Processor PowerHigh Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsVery Low RDS(on) at 4.5V VGSUltra-Low Gate ImpedanceFully Characterized Avalanche Voltage and CurrentLead-FreeRoHS compliant
    • Shop: reichelt elektronik
    • Price: 0.52 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.25 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.75 EUR excl. shipping


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