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DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W

DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA

Shop: reichelt elektronik
Price: 0.70 EUR excl. shipping

DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W

The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V

Shop: reichelt elektronik
Price: 0.90 EUR excl. shipping

DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W

DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA

Shop: reichelt elektronik
Price: 0.55 EUR excl. shipping

DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W

These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA

Shop: reichelt elektronik
Price: 0.77 EUR excl. shipping

DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 0.98 EUR excl. shipping

DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA

Shop: reichelt elektronik
Price: 1.80 EUR excl. shipping

DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W

These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA

Shop: reichelt elektronik
Price: 0.57 EUR excl. shipping

MAX5033DASA+ - Step-Down-Regler, Adj, 500mA, 7,5-76Vi, SO8

FeaturesWide 7.5V to 76V Input Voltage RangeFixed (3.3V, 5V, 12V) and Adjustable (1.25V to 13.2V) Voltage Versions500mA Output CurrentEfficiency Up to 94%Internal 0.4O High-Side DMOS FET270µA Quiescent Current at No Load, 10µA Shutdown CurrentInternal Frequency CompensationFixed 125kHz Switching FrequencyThermal Shutdown and Short-Circuit Current Limit8-Pin SO and PDIP PackagesApplicationsConsumer ElectronicsIndustrialDistributed Power

Shop: reichelt elektronik
Price: 4.70 EUR excl. shipping

MAX5033DUSA+ - Step-Down-Regler, Adj, 500mA, 7,5-76Vi, SO8