44 Results for : temperaturefast

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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.59 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.31 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.79 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.05 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.10 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLogic LevelDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.15 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.40 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.25 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.75 EUR excl. shipping
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    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.40 EUR excl. shipping


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