77 Results for : minimized
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Tbd: Official Aptitude Maximized, Expense Minimized
Erscheinungsdatum: 16.02.2020, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Official Aptitude Maximized. Expense Minimized, Titelzusatz: as Shewn in the Several Papers Comprised in This Volume, Autor: Tbd, Verlag: HardPress Publishing, Sprache: Englisch, Schlagworte: HISTORY // General, Rubrik: Geschichte, Seiten: 534, Informationen: Paperback, Gewicht: 764 gr, Verkäufer: averdo- Shop: averdo
- Price: 29.19 EUR excl. shipping
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STP11NK40Z - MOSFET N-Ch+Z-Dio 400V 9A 110W 0,55R TO220
N-channel 400 V, 0.47 O typ., 9 A SuperMESH Power MOSFETsFeatures• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitance• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 0.73 EUR excl. shipping
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STP6NK90Z - MOSFET N-Ch+Z-Dio 900V 5,8A 140W 2R TO220
N-channel 900 V, 1.56 O typ., 5.8 A SuperMESH™ Power MOSFETFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 2.15 EUR excl. shipping
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STP6NK90ZFP - MOSFET N-Ch+Z-Dio 900V 5,8A 30W 2R TO220FP
N-channel 900 V, 1.56 O typ., 5.8 A SuperMESH™ Power MOSFETisolated FP-PackageFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 1.50 EUR excl. shipping
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STP2NK100Z - MOSFET N-Kanal+Z-Dio, 1000 V, 1,85 A, RDS(on) 6,25 Ohm, TO220
N-channel 1000 V, 6.25 O typ., 1.85 A SuperMESH™ Power MOSFETsFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitance• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 1.12 EUR excl. shipping
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STP2NK90Z - MOSFET N-Ch+Z-Dio 900V 2,1A 70W 6,5R TO220
N-channel 900 V, 5 O typ., 2.1 A SuperMESH™ Power MOSFETsFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitance• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 0.77 EUR excl. shipping
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STP3NK90Z - MOSFET N-Kanal+Z-Dio, 900 V, 3 A, RDS(on) 4,8 Ohm, TO220
N-channel 900 V, 3.6 O typ., 3 A SuperMESH™ Power MOSFETsFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitance• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 1.10 EUR excl. shipping
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STP7NK40Z - MOSFET N-Ch+Z-Dio 400V 5,4A 70W 1R TO220
N-channel 400 V, 0.85 O typ., 5.4 A, SuperMESH™ Power MOSFETsFeatures• Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitance• Zener-protectedApplications• Switching applications- Shop: reichelt elektronik
- Price: 0.95 EUR excl. shipping
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STP9NK60Z - MOSFET N-Ch+Z-Dio 600V 7A 125W 0,95R TO220
N-channel 600 V, 0.85 O typ., 7 A Zener-protected SuperMESH™ Power MOSFETFeatures�Extremely high dv/dt capability�Improved ESD capability�100% avalanche tested�Gate charge minimized�Very low intrinsic capacitancesApplications�Switching applications- Shop: reichelt elektronik
- Price: 1.65 EUR excl. shipping
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STB11NK50Z - MOSFET N-Ch+Z-Dio 500V 10A 0,52R D²Pak
Zener-protected SuperMESH Power MOSFETFeatures�Extremely high dv/dt capability�100% avalanche tested�Gate charge minimized�Very low intrinsic capacitancesApplication�Switching applicationsDescriptionThe SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialcare is taken to ensure a very good dv/dt capability for the most demanding applications.- Shop: reichelt elektronik
- Price: 1.15 EUR excl. shipping