1,292 Results for : utilize

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    Reinhardt:How men and women utilize ide
    Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: How men and women utilize ideology in Alcoholics Anonymous, Autor: Reinhardt, Candice, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Völkerkunde, Seiten: 160, Informationen: Paperback, Gewicht: 256 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 61.39 EUR excl. shipping
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    Ematinger:Crafting Business Models and
    Erscheinungsdatum: 15.04.2019, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Crafting Business Models and Value Propositions with Serious Play, Titelzusatz: How to Utilize an 3D Approach for Building and Testing Better Businesses, Autor: Ematinger, Reinhard, Verlag: SPS, Sprache: Englisch, Rubrik: Wirtschaft // Management, Seiten: 304, Informationen: Paperback, Gewicht: 473 gr, Verkäufer: averdo
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    • Price: 79.49 EUR excl. shipping
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    Ematinger, R: Crafting Business Models and Value Proposition
    Erscheinungsdatum: 15.04.2019, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Crafting Business Models and Value Propositions with Serious Play, Titelzusatz: How to Utilize an 3D Approach for Building and Testing Better Businesses, Autor: Ematinger, Reinhard, Verlag: SPS, Sprache: Englisch, Rubrik: Wirtschaft // Management, Seiten: 304, Informationen: Paperback, Gewicht: 473 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 94.90 EUR excl. shipping
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    A National Technical University for Great Britain and Her Colonies
    Erscheinungsdatum: 16.02.2020, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: A National Technical University for Great Britain and Her Colonies, Titelzusatz: Or, How to Utilize Greenwich Hospital and the Obsolete Charities, a Letter, Verlag: HardPress Publishing, Sprache: Englisch, Schlagworte: HISTORY // General, Rubrik: Geschichte, Seiten: 72, Informationen: Paperback, Gewicht: 120 gr, Verkäufer: averdo
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    • Price: 14.29 EUR excl. shipping
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    STB100N10F7 - MOSFET N-Ch 100V 80A 0,008R D²Pak
    STripFET™ F7 Power MOSFETsFeaturesAmong the lowest RDS(on) on the marketExcellent FoM (figure of merit)Low Crss/Ciss ratio for EMI immunityHigh avalanche ruggednessApplicationsSwitching applicationsDescriptionThese N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
    • Shop: reichelt elektronik
    • Price: 3.55 EUR excl. shipping
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    STD100N10F7 - MOSFET N-Ch 100V 80A 0,008R TO252
    STripFET™ F7 Power MOSFETsFeaturesAmong the lowest RDS(on) on the marketExcellent FoM (figure of merit)Low Crss/Ciss ratio for EMI immunityHigh avalanche ruggednessDescriptionThese N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.ApplicationsSwitching applications
    • Shop: reichelt elektronik
    • Price: 2.20 EUR excl. shipping
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    Nyakundi:Retrofit of Kerosene Pressure
    Erscheinungsdatum: 29.08.2017, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Retrofit of Kerosene Pressure Lamp to Utilize Straight Vegetable Oil, Autor: Nyakundi, Abel, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Technik // Sonstiges, Seiten: 128, Informationen: Paperback, Gewicht: 209 gr, Verkäufer: averdo
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    • Price: 44.09 EUR excl. shipping
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    IRFL4310PBF - MOSFET N-Kanal, 100 V, 2,2 A, Rds(on) 0,2 Ohm, SOT223
    HEXFET® Power MOSFETSurface MountDynamic dv/dt RatingFast SwitchingEase of ParallelingAdvanced Process TechnologyUltra Low On-ResistanceLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    IRLL024NPBF - MOSFET N-LogL 55V 4,4A 0,065R SOT223
    HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs arewell known for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.75 EUR excl. shipping
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    IRLZ24NSPBF - MOSFET N-LogL 55V 18A 0,06R D²Pak
    HEXFET® Power MOSFETFeaturesLogic-Level Gate DriveAdvanced Process TechnologySurface Mount (IRLZ24NS)175°C Operating TemperatureFast SwitchingFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.
    • Shop: reichelt elektronik
    • Price: 0.95 EUR excl. shipping

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