327 Results for : utilizes

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    Topeak Joe Blow Sport 2Stage Track Pump - Standpumpen
    Stage one opens both barrels for huge volume, reaching 30 psi with 30% less effort than standard floor pumps. Stage two utilizes the small barrel for pressures up to 160 psi. Plus, it features Topeak's Hammer type TwinHead DX5 pump head with an extra-long and tangle-free hose makes it easy to reach valve stems. A durable steel barrel and large steel base provide extra stability.
    • Shop: Wiggle DACH
    • Price: 72.99 EUR excl. shipping
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    Eric M. Deadwiley: CIVIL DEATH IN NEW YORK STATE
    Erscheinungsdatum: 17.12.2009, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: CIVIL DEATH IN NEW YORK STATE, Titelzusatz: How New York State Utilizes Criminal Conviction Records to impede the Economic Growth of Formerly Convicted People., Autor: Eric M. Deadwiley, Verlag: iUniverse, Sprache: Englisch, Schlagworte: SOCIAL SCIENCE // Sociology // General, Rubrik: Soziologie, Seiten: 124, Informationen: Paperback, Gewicht: 142 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 19.29 EUR excl. shipping
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    Quadri:News Reporting and Social Media
    Erscheinungsdatum: 06.04.2018, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: News Reporting and Social Media in the Times of Crisis, Titelzusatz: A study examining how modern news reporting utilizes social media to spread news and ultimately shapes audience opinions, Autor: Quadri, Shaan, Verlag: AV Akademikerverlag, Sprache: Englisch, Rubrik: Medienwissenschaften // Sonstiges, Seiten: 96, Informationen: Paperback, Gewicht: 159 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 48.09 EUR excl. shipping
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    IRFR1010ZPBF - MOSFET N-Ch 55V 42A 0,0075R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety applications.
    • Shop: reichelt elektronik
    • Price: 2.00 EUR excl. shipping
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    IRFL024ZPBF - MOSFET N-Ch 55V 5,1A 0,0575R SOT223
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance150°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitiveavalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.52 EUR excl. shipping
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    IRFR120ZPBF - MOSFET N-Ch 100V 8,7A 0,19R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.59 EUR excl. shipping
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    IRFR4104PBF - MOSFET N-Ch 40V 42A 0,0055R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 1.31 EUR excl. shipping
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    IRFR4105ZPBF - MOSFET N-Ch 55V 30A 0,0245R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.79 EUR excl. shipping
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    IRL1404ZSPBF - MOSFET N-LogL 40V 120A 0,0031R D²Pak
    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.05 EUR excl. shipping
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    IRL3705ZSPBF - MOSFET N-LogL 55V 75A 0,008R D²Pak
    HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 2.10 EUR excl. shipping

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