47 Results for : to252

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    low gate charge STripFET™ Power MOSFETFeaturesExceptional dv/dt capability�Low gate charge�100% avalanche testedDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiencyisolated DC-DC converters.Application�Switching applications
    • Shop: reichelt elektronik
    • Price: 1.90 EUR excl. shipping
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    STripFET™ VI DeepGATE™ Power MOSFETFeaturesRDS(on) * Qg industry benchmarkExtremely low on-resistance RDS(on)High avalanche ruggednessLow gate input resistanceDescriptionThis device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packagesApplicationsSwitching applicationsLCC converters, resonant converters
    • Shop: reichelt elektronik
    • Price: 1.10 EUR excl. shipping
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    STripFET™ II Power MOSFETGeneral features�Low threshold driveDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique ''Single Feature Size™'' strip-based process. The resulting transistor shows extremely high packing densityfor low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.Applications�Switching application
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    30V N-Channel Power MOSFET
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    30V N-Channel Power MOSFET
    • Shop: reichelt elektronik
    • Price: 0.62 EUR excl. shipping
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    N-Channel Power MOSFETFEATURES�Low RDS(ON) 3.3ƒ¶ (Typ.)�Low gate charge typical @ 19nC (Typ.)�Low Crss typical @ 10.2pF (Typ.)�Improved dv/dt capabilityAPPLICATION�Power Supply�Lighting
    • Shop: reichelt elektronik
    • Price: 0.95 EUR excl. shipping
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    N-Channel Power MOSFETFeatures�Low RDS(ON) 4.3R (Typ.)�Low gate charge typical @ 17nC (Typ.)�Low Crss typical @ 8.7pF (Typ.)General DescriptionThe TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
    • Shop: reichelt elektronik
    • Price: 0.95 EUR excl. shipping
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    N-Channel Power MOSFETFEATURES�100% Avalanche Tested�Pb-free plating�Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC�Halogen-free according to IEC 61249-2-21 definitionAPPLICATION�Power Supply�Lighting
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    N-Channel Power MOSFETApplication�Power Supply.�LightingNote: ''G�'' denotes for Halogen- and Antimony-free as those whichcontain
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    N-Channel Power MOSFETFeatures�Super-Junction technology�High performance due to small figure-of-merit�High ruggedness performance�High commutation performanceApplication�Power Supply�LightingNote: “G” denotes for Halogen- and Antimony-free as those which contain
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping


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