463 Results for : ideally

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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping
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    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
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    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
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    ILD 213T - 2xOptokoppler 4kV 70V 30mA >100% SO8
    2xOptokoppler 4kV 70V 30mA >100% SO8The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/206T/207T/211T/213T/217T come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.
    • Shop: reichelt elektronik
    • Price: 0.56 EUR excl. shipping
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    ILD 217T - 2xOptokoppler 4kV 70V 30mA >100% SO8
    2xOptokoppler 4kV 70V 30mA >100% SO8The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/206T/207T/211T/213T/217T come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V.
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    Ritchey WCS Rizer Handlebar 760mm - Riser-Lenker
    With a tough, triple-butted aluminium construction providing long-lasting quality and comfort, this top-handling WCS model is more than equipped to meet the demands put on it by the modern rider. Measuring a 760mm width, it is ideally sized for weaving your way through tight and narrow sections, while the 9-degree backsweep and 31.8mm oversize clamp diameter give it a familiar feel. Available with either a 20mm or 30mm rise, this hard-riding handlebar is a great addition to the venturesome rider's cockpit. 
    • Shop: Wiggle DACH
    • Price: 62.99 EUR excl. shipping
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    Ritchey WCS Rizer Handlebar 760mm - Riser-Lenker
    With a tough, triple-butted aluminium construction providing long-lasting quality and comfort, this top-handling WCS model is more than equipped to meet the demands put on it by the modern rider. Measuring a 760mm width, it is ideally sized for weaving your way through tight and narrow sections, while the 9-degree backsweep and 31.8mm oversize clamp diameter give it a familiar feel. Available with either a 20mm or 30mm rise, this hard-riding handlebar is a great addition to the venturesome rider's cockpit. 
    • Shop: Wiggle DACH
    • Price: 62.99 EUR excl. shipping
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    Spank FLARE 25 Vibrocore Drop Handlebar - Rennradlenker
    Filled with an innovative Vibrocore foam, this brilliant bar limits harmful vibrations while improving strength and longevity from the inside out. Built from a special Zirconium-Doped 7-Series alloy, it is designed with a round profile upper-section which facilitates a wide range of rider/hand positions, while the 25-degree flare in the drops gives you plenty of room and support when riding low.  The drop and reach geometry is ideally measured for the hard-riding adventurer, making this a versatile choice for the venturesome rider.
    • Shop: Wiggle DACH
    • Price: 100.99 EUR excl. shipping

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