47 Results for : to252
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TSM051N04LCP - MOSFET N-Ch 40V 96A 0,0051R TO252
N-Channel Power MOSFETFEATURES�Low RDS(ON) to minimize conductive losses�Logic level�Low gate charge for fast power switching�100% UIS and Rg tested.�175�‹C Operating Junction Temperature�Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC�Halogen-free according to IEC 61249-2-21APPLICATIONS�BLDC Motor Control�Battery Power Management�DC-DC converter�Secondary Synchronous Rectification- Shop: reichelt elektronik
- Price: 0.60 EUR excl. shipping
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STD1NK80Z - MOSFET N-Ch+Z-Dio 800V 1A 16R TO252
Zener - Protected SuperMESH™ MOSFETGeneral Features�TYPICAL RDS(on) = 13REXTREMELY HIGH dv/dt CAPABILITYESD IMPROVED CAPABILITY100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED DESCRIPTIONThe SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.APPLICATIONSAC ADAPTORS AND BATTERY CHARGERSSWITH MODE POWER SUPPLIES (SMPS)- Shop: reichelt elektronik
- Price: 0.60 EUR excl. shipping
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STD2N62K3 - MOSFET N-Ch+Z-Dio 620V 2,2A 3,6R TO252
MDmesh™ K3 Power MOSFETsFeatures100% avalanche testedExtremely high dv/dt capabilityVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protectedDescriptionThese MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 0.75 EUR excl. shipping
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STD5NK40Z - MOSFET N-Ch+Z-Dio 400V 3A 1,8R TO252
SuperMESH™ Power MOSFETsFeatures100% avalanche testedGate charge minimizedVery low intrinsic capacitanceZener-protectedDescriptionThese high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 0.53 EUR excl. shipping
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STD17NF25 - MOSFET N-Kanal, 250 V, 17 A, Rds(on) 0,14 Ohm, TO252
STripFET™ II Power MOSFETsFeaturesExceptional dv/dt capability100% avalanche testedLow gate chargeDescriptionThese Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 2.10 EUR excl. shipping
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STD1NK60 - MOSFET N-Kanal, 600 V, 1 A, RDS(on) 8,0 Ohm, TO252
STD1NK60, N-CHANNEL 600V - 8O - 1A DPAK SuperMESH™ MOSFETBeschreibung:Die SuperMESH™-Serie ist das Ergebnis einer extremen Optimierung des bewährten streifenbasierten PowerMESH™-Layouts von ST. Neben der deutlichen Senkung des On-Widerstands wurde besonders darauf geachtet, dass eine sehr gute dv/dt-Fähigkeit für die anspruchsvollsten Anwendungen gewährleistet ist. Diese Serie ergänzt die gesamte Palette der Hochspannungs-MOSFETs von ST, einschließlich der revolutionären MDmesh™-Produkte.Merkmale• TYPISCH RDS(on) = 8 O• EXTREM HOHE dv/dt-FÄHIGKEIT• VERBESSERTE ESD-FÄHIGKEIT• 100% AVALANCHE-GETESTET• NEUER HOCHSPANNUNGS-BENCHMARK• GATE-LADUNG MINIMIERTAnwendungen• BATTERIELADEGERÄTE MIT GERINGER LEISTUNG• SCHALTNETZTEILE MIT GERINGER LEISTUNG (SMPS)• NIEDRIGE LEISTUNG, VORSCHALTGERÄTE, CFL (KOMPAKT LEUCHTSTOFFLAMPEN)- Shop: reichelt elektronik
- Price: 0.48 EUR excl. shipping
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STD7NM60N - MOSFET N-Kanal, 600 V, 5 A, RDS(on) 0,8 Ohm, TO252
MDmesh™ II Power MOSFETsFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceDescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’slowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.ApplicationsSwitching applications- Shop: reichelt elektronik
- Price: 0.85 EUR excl. shipping